IRFR3709Z
Версия для печати
Hexfet power mosfets discrete n-channelНаименование |
Кол-во
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Цена
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| IRFR3709Z | 1856 | 36.30 руб. | |
Технические характеристики IRFR3709Z
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 15A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 86A |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Gate Charge (Qg) @ Vgs | 26nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 2330pF @ 15V |
| Power - Max | 79W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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IRFR3709Z MOSFET HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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