SI7469DP-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
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|---|---|---|---|
| SI7469DP-T1-GE3 | 188 | 227.52 руб. | |
Описание SI7469DP-T1-GE3
MOSFET P-CH D-S 80V 8-SOICТехнические характеристики SI7469DP-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 10.2A, 10V |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 28A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4700pF @ 40V |
| Power - Max | 83W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® SO-8 |
| Корпус | PowerPAK® SO-8 |
