IRFP4468PBF
Версия для печати
N-канальный Полевой транзистор (Vds=200V, Id=195ARds On (Max) @ Id, Vgs 2.6 mOhm @ 180A, 10V, Vds 19860pF @ 50V,520W,540nC @ 10VНаименование |
Кол-во
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Цена
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| IRFP4468PBF | 912 | 260.92 руб. | |
Технические характеристики IRFP4468PBF
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 180A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 195A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 540nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 19860pF @ 50V |
| Power - Max | 520W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 (TO-247AC) |
| Корпус | TO-247AC |
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IRFP4468PbF MOSFET 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC
Производитель:
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