Наименование |
Кол-во
|
Цена
|
---|---|---|
IRF5305 | 800 | 45.29 |
Параметр |
Значение |
---|---|
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 16A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 31A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
Power - Max | 3.8W |
Тип монтажа | Выводной |
Корпус (размер) | TO-262-3 (Straight Leads) |
Корпус | TO-262 |