BSP317P
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| BSP317P | 4651 |
|
|
Технические характеристики BSP317P
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Серия | SIPMOS® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 4 Ohm @ 430mA, 10V |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 430mA |
| Vgs(th) (Max) @ Id | 2V @ 370µA |
| Gate Charge (Qg) @ Vgs | 15.1nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 262pF @ 25V |
| Power - Max | 1.8W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | PG-SOT223-4 |
