BSP220
Версия для печати
P-channel enhancement mode vertical d-mos transistorНаименование |
Кол-во
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Цена
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| BSP220 (NXP) | 799 | 29.41 руб. | |
Технические характеристики BSP220
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 12 Ohm @ 200mA, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 225mA |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 90pF @ 25V |
| Power - Max | 1.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
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BSP220 MOSFET P-channel enhancement mode vertical D-MOS transistor
Производитель:
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