MMBT6517LT1G
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| MMBT6517LT1G | 4 |
|
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Технические характеристики MMBT6517LT1G
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 350V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Power - Max | 225mW |
| Frequency - Transition | 200MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Possible Adhesion Issue 11/July/2008 |
