SI4401BDY-T1-GE3
Версия для печати
Наименование |
Кол-во
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Цена
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|---|---|---|---|
| SI4401BDY-T1-GE3 (VISHAY) | 1327 | 657.89 руб. | |
Описание SI4401BDY-T1-GE3
MOSFET P-CH 40V 8.7A 8-SOICТехнические характеристики SI4401BDY-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 10.5A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 8.7A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 55nC @ 5V |
| Power - Max | 1.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
