SI2305CDS-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI2305CDS-T1-GE3 (VISHAY) | 1698 | 14.39 руб. | |
Технические характеристики SI2305CDS-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 4.4A, 4.5V |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25° C | 5.8A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) @ Vgs | 30nC @ 8V |
| Input Capacitance (Ciss) @ Vds | 960pF @ 4V |
| Power - Max | 1.7W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 (TO-236) |
