SI2301BDS-T1-GE3
Версия для печати
Наименование |
Кол-во
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Цена
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|---|---|---|---|
| SI2301BDS-T1-GE3 (VISHAY) | 76 | 49.81 руб. | |
Описание SI2301BDS-T1-GE3
MOSFET P-CH 20V 2.2A SOT23-3Технические характеристики SI2301BDS-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.8A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 375pF @ 6V |
| Power - Max | 700mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 (TO-236) |
