PHD98N03LT
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| PHD98N03LT (NXP) | 3 | 156.00 руб. | |
Технические характеристики PHD98N03LT
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | TrenchMOS™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 25A, 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) @ Vgs | 40nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 3000pF @ 20V |
| Power - Max | 111W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
