PDTD113ET,215
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| PDTD113ET,215 (NEX) | 2677 | 10.40 руб. | |
Описание PDTD113ET,215
TRANS NPN W/RES 50V SOT-23Технические характеристики PDTD113ET,215
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 1K |
| Resistor - Emitter Base (R2) (Ohms) | 1K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 250mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | TO-236AB |
