NTR1P02T1G
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| NTR1P02T1G (ONS) | 1079 | 24.39 руб. | |
Технические характеристики NTR1P02T1G
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 2.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 165pF @ 5V |
| Power - Max | 400mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Wire Change for SOT23 Pkg 26/May/2009 |
