MJD112T4
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| MJD112T4 | 2000 | 43.13 руб. | |
Технические характеристики MJD112T4
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Power - Max | 20W |
| Frequency - Transition | 25MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
