MJD112G
Версия для печатиНаименование |
Кол-во
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Цена
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MJD112G | 60 | ||
Описание MJD112G
TRANS DARL NPN 2A 100V DPAKТехнические характеристики MJD112G
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 1.75W |
Frequency - Transition | 25MHz |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | DPAK-3 |