IRFR9N20DTRPBF
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRFR9N20DTRPBF (INFINEON) | 1310 | 109.17 руб. | |
Технические характеристики IRFR9N20DTRPBF
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.6A, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9.4A |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 560pF @ 25V |
| Power - Max | 86W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
