IRFIBF30GPBF
Версия для печати
Hexfet® power mosfetНаименование |
Кол-во
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Цена
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| IRFIBF30GPBF (VISHAY) | 798 | 302.40 руб. | |
Технические характеристики IRFIBF30GPBF
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 3.7 Ohm @ 1.1A, 10V |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 1.9A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 78nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 35W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 Full Pack, Isolated |
| Корпус | TO-220-3 |
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IRFIBF30GPBF MOSFET HEXFET® Power MOSFET
Производитель:
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