IRF5803D2PBF
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF5803D2PBF (INFINEON) | 1 | 54.32 руб. | |
Технические характеристики IRF5803D2PBF
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | FETKY™ |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Diode (Isolated) |
| Rds On (Max) @ Id, Vgs | 112 mOhm @ 3.4A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 3.4A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1110pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
