FDC6302P
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| FDC6302P | 5 |
|
|
Технические характеристики FDC6302P
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 200mA, 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 120mA |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 0.31nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 11pF @ 10V |
| Power - Max | 700mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-SSOT, SuperSOT™-6 |
| Корпус | 6-SSOT |
| Product Change Notification | Design/Process Change Notification 11/May/2007 Mold Compound Change 0 |
