BSS138W
Версия для печати
N-channel enhancement mode field effect transistorНаименование |
Кол-во
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Цена
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|---|---|---|---|
| BSS138W | 48000 | 1.58 руб. | |
Технические характеристики BSS138W
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | SIPMOS® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 200mA, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 280mA |
| Vgs(th) (Max) @ Id | 1.4V @ 26µA |
| Gate Charge (Qg) @ Vgs | 1.5nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 43pF @ 25V |
| Power - Max | 500mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SOT-323 |
| Корпус | PG-SOT323-3 |
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BSS138W MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Производитель:
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