BSS123LT1G
Версия для печати
Тип монт. - smd, VDS, В - 100, ID, А - 0,2, Ptot, Вт — 0,2Наименование |
Кол-во
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Цена
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|---|---|---|---|
| BSS123LT1G (ON SEMICONDUCTOR) | 416 | 8.40 руб. | |
Технические характеристики BSS123LT1G
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 100mA, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Continuous Drain (Id) @ 25° C | 170mA |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 20pF @ 25V |
| Power - Max | 225mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Wire Change for SOT23 Pkg 26/May/2009 |
