TPS1120DR
Версия для печати
Наименование |
Кол-во
|
Цена
|
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|---|---|---|---|
| TPS1120DR | 4 |
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Описание TPS1120DR
MOSFET 2P-CH 15V 1.17A 8-SOICТехнические характеристики TPS1120DR
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
| Drain to Source Voltage (Vdss) | 15V |
| Current - Continuous Drain (Id) @ 25° C | 1.17A |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 5.45nC @ 10V |
| Power - Max | 840mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOIC |
