SUD50N04-8M8P-4GE3
Версия для печатиНаименование |
Кол-во
|
Цена
|
|
---|---|---|---|
SUD50N04-8M8P-4GE3 (VISHAY) | 1 | 70.59 руб. | |
Описание SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 50A TO-252Технические характеристики SUD50N04-8M8P-4GE3
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 20A, 10V |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 50A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2400pF @ 20V |
Power - Max | 48.1W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | TO-252, (D-Pak) |