SI9945BDY-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI9945BDY-T1-GE3 (VISHAY) | 112 | 104.47 руб. | |
Технические характеристики SI9945BDY-T1-GE3
| Input Capacitance (Ciss) @ Vds | 665pF @ 15V |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 5.3A |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.3A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Power - Max | 3.1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
