SI7489DP-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
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|---|---|---|---|
| SI7489DP-T1-GE3 (VISHAY) | 18 | 231.74 руб. | |
Описание SI7489DP-T1-GE3
MOSFET P-CH 100V 28A PPAK 8SOICТехнические характеристики SI7489DP-T1-GE3
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 41 mOhm @ 7.8A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 28A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4600pF @ 50V |
| Power - Max | 83W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® SO-8 |
| Корпус | PowerPAK® SO-8 |
