Si7288DP-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI7288DP-T1-GE3 (VISHAY) | 834 | 131.86 руб. | |
Технические характеристики Si7288DP-T1-GE3
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Drain to Source Voltage (Vdss) | 40V |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 10A, 10V |
| FET Feature | Standard |
| FET Type | 2 N-Channel (Dual) |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 565pF @ 20V |
| Power - Max | 15.6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | PowerPAK® SO-8 Dual |
| Корпус | PowerPAK® SO-8 Dual |
