SI4948BEY-T1-E3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI4948BEY-T1-E3 | 4 |
|
|
Технические характеристики SI4948BEY-T1-E3
| Current - Continuous Drain (Id) @ 25° C | 2.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 3.1A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Power - Max | 1.4W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
