Si4388DY-T1-E3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI4388DY-T1-E3 | 2 |
|
|
Технические характеристики Si4388DY-T1-E3
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 8.1A, 8.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 8A, 10V |
| FET Feature | Standard |
| FET Type | 2 N-Channel (Dual) |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 946pF @ 15V |
| Power - Max | 1.9W, 2.2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
