IRF7832TRPBF
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| IRF7832TRPBF | 620 | 60.72 руб. | |
Технические характеристики IRF7832TRPBF
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 20A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Vgs(th) (Max) @ Id | 2.32V @ 250µA |
| Gate Charge (Qg) @ Vgs | 51nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 4310pF @ 15V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
