FQD19N10LTM

Наименование	Кол-во	Цена
FQD19N10LTM (ONS)	201	108.67 руб.

MOSFET N-CH 100V 15.6A DPAK

Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Product Change Notification	Lead Dimension Change 23/Jan/2007
Серия	QFET™
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate
Rds On (Max) @ Id, Vgs	100 mOhm @ 7.8A, 10V
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	15.6A
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) @ Vgs	18nC @ 5V
Input Capacitance (Ciss) @ Vds	870pF @ 25V
Power - Max	2.5W
Тип монтажа	Поверхностный
Корпус (размер)	TO-252-3, DPak (2 Leads + Tab), SC-63
Корпус	D-Pak

FQD19N10L.pdf