FDN357N
Версия для печати
N-channel logic level enhancement mode field effect transistorНаименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| FDN357N | 7200 | 9.23 руб. | |
Технические характеристики FDN357N
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 2.2A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 1.9A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 5.9nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 235pF @ 10V |
| Power - Max | 460mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | 3-SSOT |
| Product Change Notification | Mold Compound Change 07/Dec/2007 Mold Compound Change 08/April/2008 |
|
FDN357N MOSFET N-Channel Logic Level Enhancement Mode Field Effect Transistor
Производитель:
|
||
