Si3900DV-T1-GE3
Версия для печати
Наименование |
Кол-во
|
Цена
|
|
|---|---|---|---|
| SI3900DV-T1-GE3 (VISHAY) | 8 | 240.00 руб. | |
Технические характеристики Si3900DV-T1-GE3
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.4A, 4.5V |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) @ Vgs | 4nC @ 4.5V |
| Power - Max | 830mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 6-TSOP (0.065", 1.65mm Width) |
| Корпус | 6-TSOP |
